Electron Spectrum and Energy Dependance (IMAGE) Moscow Institute of Physics and Technology Caption (A) Electron spectrum E(p) in bilayer graphene (left) and energy dependence of its density of states, DoS (right). At energy levels corresponding to the edge of the "Mexican hat" the DoS tends to infinity. (B) The red areas show the states of electrons that participate in tunneling in bilayer graphene (left) and in a conventional semiconductor with "ordinary" parabolic bands (right). Electrons that are capable of tunneling at low voltages are found in the ring in graphene, but in the semiconductor they are only found at the single point. The dotted lines indicate the tunneling transitions. The red lines indicate the trajectories of the tunneling electrons in the valence band. Credit Authors of the study Usage Restrictions None License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.