Contact: John Toon
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Georgia Institute of Technology Research News
Caption: Georgia Tech Ph.d. student Ram Krithivasan examines a silicon germanium chip inside a cryogenic test station at the Georgia Electronic Design Center at Georgia Tech in Atlanta. IBM and Georgia Tech have announced that they have broken the world silicon speed record with a chip that operates at half a trillion cycles per second, some 250 times faster than chips found in conventional cell phones.
Credit: Georgia Tech Photo: Gary Meek
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Related news release: Georgia Tech/IBM team demonstrates first 500 GHz silicon-germanium transistors