Contact: Michael Baum
michael.baum@nist.gov
301-975-2763
National Institute of Standards and Technology (NIST)

Silicon X-rays

Caption: X-ray topographs of three different strata of a strained-silicon wafer show close correspondence in defects from the base silicon layer (top) through the final strained-silicon layer (bottom). Color has been added for contrast, one particular defect area is highlighted.

Credit: Courtesy National Institute of Standards and Technology

Usage Restrictions: None

Related news release: Stress management: X-rays reveal Si thin-film defects