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Contact: John Toon
jtoon@gatech.edu
404-894-6986
Georgia Institute of Technology Research News
Caption: This diagram compares a nanowire/nanobelt based field effect transistor (FET) with a piezoelectric FET. The role played by a gate electrode is replaced by the piezoelectric field produced across the nanowire/nanobelt by an external force (F) so the transport current is gated by the degree of nanowire bending.
Credit: Image courtesy Zhong Lin Wang
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Related news release: Researchers create new class of electronic components by bending zinc oxide nanowires
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