3-D Modulation-Doping Boosts Performance of Alloy Semiconductor SiGe (image) Boston College Share Print E-Mail Caption While long valued for high-temperature applications, the bulk alloy semiconductor SiGe hasn't lent itself to broader adoption because of its low thermoelectric performance and the high cost of Germanium. A novel nanotechnology design created by researchers from Boston College and MIT has shown a 30 to 40 percent increase in thermoelectric performance and reduced the amount of costly Germanium. Credit Nano Letters Usage Restrictions None Share Print E-Mail Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.