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Contact: Ed Hayward
Boston College

3-D Modulation-Doping Boosts Performance of Alloy Semiconductor SiGe

Caption: While long valued for high-temperature applications, the bulk alloy semiconductor SiGe hasn't lent itself to broader adoption because of its low thermoelectric performance and the high cost of Germanium. A novel nanotechnology design created by researchers from Boston College and MIT has shown a 30 to 40 percent increase in thermoelectric performance and reduced the amount of costly Germanium.

Credit: Nano Letters

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Related news release: With new design, bulk semiconductor proves it can take the heat

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