Contact: Daniel Parry
Naval Research Laboratory
Caption: A locally etched back-gated field effect transistor (FET) structure with a deposited dielectric layer. Thick dielectric layers are highly susceptible to radiation induced charge build-up, which is known to cause threshold voltage shifts and increased leakage in metal-oxide semiconductor (MOS) devices. To mitigate these effects, the dielectric layer is locally etched in the active region of the back-gated FET. A gate dielectric material is then deposited (depicted in red) over the entire substrate.
Credit: U.S. Naval Research Laboratory
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