Hybrid quantum dot-superconducting resonator device. (a) Circuit schematic and micrograph of the hybrid device design. Scanning electron micrograph (b) and cross-sectional schematic view (c) of the nanowire double quantum dot (DQD). The left and right barrier gates (BL and BR), left and right plunger gates (L and R), and middle gate (M) are biased to create a double-well potential within the nanowire. The drain contact of the nanowire, D, is grounded, and the
source contact, S, is connected to an antinode of the resonator, oscillating at a voltage VCavity.