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Contact: Melissa Van De Werfhorst
melissa@engineering.ucsb.edu
805-893-4301
University of California - Santa Barbara

Illustration of FET Fabricated Using Monolayer WSe2

Caption: This is a schematic view of a back-gated field-effect-transistor fabricated by UCSB researchers using monolayer tungsten diselenide (WSe2) channel material.

Credit: Peter Allen, UCSB

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