An Illustration of the RRAM Array (image) American Institute of Physics Caption (A) This is an illustration of the RRAM array with each memory cell comprising of one filament (sandwiched between two electrodes). In comparison to the surrounding insulator matrix, a number of nano-filaments are formed within the bulk oxide. (B) This is a basic element of a RRAM cell. Control of the electrical field leads to different resistance states. (C) Localized formation of conductive filaments in a TiO2 thin film is shown. The left shows the conductivity map recorded by CAFM. The right shows the same current mapping in 3D. Credit Yuanmin Du/National U.Singapore Usage Restrictions None Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.