The Atomic Arrangement at a Relaxed InGaN/GaN Interface (image) Arizona State University Share Print E-Mail Caption The atomic arrangement at a relaxed InGaN/GaN interface created by layer-by-layer atomic crystal growth is shown. The technique may point to new developments in solar cell efficiency. Credit Arizona State University Usage Restrictions None Share Print E-Mail Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.