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Contact: Margaret Coulombe
margaret.coulombe@asu.edu
480-727-8934
Arizona State University

The Atomic Arrangement at a Relaxed InGaN/GaN Interface

Caption: The atomic arrangement at a relaxed InGaN/GaN interface created by layer-by-layer atomic crystal growth is shown. The technique may point to new developments in solar cell efficiency.

Credit: Arizona State University

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Related news release: ASU, Georgia Tech create breakthrough for solar cell efficiency


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