Photo-Induced Charge Doping of Graphene/boron Nitride (image) DOE/Lawrence Berkeley National Laboratory Share Print E-Mail Caption Semiconductors made from graphene and boron nitride can be charge-doped using light. When the GBN heterostructure is exposed to light (green arrows), positive charges move from the graphene layer (purple) to boron nitride layer (blue). Credit Image courtesy of Feng Wang, Berkeley Lab Usage Restrictions None Share Print E-Mail Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.