[ Back to EurekAlert! ]

Contact: Lynn Yarris
lcyarris@lbl.gov
510-486-5375
DOE/Lawrence Berkeley National Laboratory

Photo-Induced Charge Doping of Graphene/boron Nitride

Caption: Semiconductors made from graphene and boron nitride can be charge-doped using light. When the GBN heterostructure is exposed to light (green arrows), positive charges move from the graphene layer (purple) to boron nitride layer (blue).

Credit: Image courtesy of Feng Wang, Berkeley Lab

Usage Restrictions: None

Related news release: Lighting the way to graphene-based devices


[ Back to EurekAlert! ]