New RRAM Memory Devices Based on Porous Silicon Oxide (image) Rice University Share Print E-Mail Caption This scanning electron microscope image and schematic show the design and composition of new RRAM memory devices based on porous silicon oxide that were created at Rice University. Credit Tour Group/Rice University Usage Restrictions For news reporting purposes only. Share Print E-Mail Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.