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Contact: David Ruth
david@rice.edu
713-348-6327
Rice University

New RRAM Memory Devices Based on Porous Silicon Oxide

Caption: This scanning electron microscope image and schematic show the design and composition of new RRAM memory devices based on porous silicon oxide that were created at Rice University.

Credit: Tour Group/Rice University

Usage Restrictions: For news reporting purposes only.

Related news release: Rice's silicon oxide memories catch manufacturers' eye


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