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Caption: These are I-V characteristics of (a) Pt/ZnO/n+-Si, (b) Pt/TiOx(5nm)/ZnO/n+-Si, (c) Pt/TiOx(10nm)/ZnO/n+-Si and (d) Pt/TiOx(15nm)/ZnO/n+-Si cells. The insets are I-V characteristics in log-log scale.
Credit: HONGXIA LI, XIAOJUN LV, JUNHUA XI, XIN WU, QINAN MAO, QINGMIN LIU and ZHENGUO JI Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018, P. R. China State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China firstname.lastname@example.org
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