Robust Aluminum Scandium Nitride Thin Films for Next-Generation Ferroelectric Memory Devices (IMAGE)

_Tokyo Institute of Technology

Robust Aluminum Scandium Nitride Thin Films for Next-Generation Ferroelectric Memory Devices

Caption

The stability of (Al,Sc)N films, with minimal changes in values suggests their suitability for next-generation ferroelectric memory devices.

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TOKYO INSTITUTE OF TECHNOLOGY

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