Figure | Concept of the non-contact inspection on the PN junction depth. (IMAGE)
Caption
Figure | Concept of the non-contact inspection on the PN junction depth. a, Schematic illustration of the buried channel transistor structure. b, THz emission from the PN junction. Ultrafast photocarrier transport due to the built-in electric field (drift current) generates the THz electromagnetic waves at the PN junction. c, PN junction depth dependence of the THz emission. A, B, and C represent the energy band diagram in Si wafers with different PN junction depths. Photocarrier density at PN junctions depends on their depth. Consequently, the amplitude of the THz emission from the PN junctions is sensitive to the depth.
Credit
Fumikazu Murakami, Shinji Ueyama et al.
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CC BY