Anisotropic atomic-layer etching process for HfO2 films (IMAGE)

Nagoya University

Anisotropic atomic-layer etching process for HfO2 films

Caption

A facile anisotropic atomic-layer etching process for HfO2 films at room temperature without using halogen-based chemicals
The process comprises a surface nitrogenation step via N+ ion bombardment, followed by O2 plasma treatment to form volatile etching byproducts. This approach enables subatomic-level etching precision while simultaneously smoothing the surface.

 

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Shih-Nan Hsiao

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