4-inch GaN-on SiC wafer (IMAGE)

Fraunhofer Institute for Applied Solid State Physics

4-inch GaN-on SiC wafer

Caption

Frontside processed 4-inch GaN-on SiC wafer of Fraunhofer IAF´s GaN07 technology. The wafers are completely fabricated and tested in Fraunhofer IAF´s III-V process line including design and fabrication of processing mask sets, epitaxy, wafer processing and characterization.

Credit

Fraunhofer IAF

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