Electrodes Unlock Atomic Switching in Ultra-Thin Memory (IMAGE)
Caption
A visualization of an atom-thin crystal sandwiched between electrodes. Auburn physicists discovered that electrodes and tiny atomic imperfections help the material switch between insulating and metallic states. This switching is the key mechanism behind next-generation memory devices that could power low-energy computing, artificial intelligence, and wearable electronics.
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Department of Physics - Auburn University
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