Silicon germanium tin quantum well (IMAGE)

University of Arkansas

Silicon germanium tin quantum well

Caption

A detail of the cover image for AEM created by University of Arkansas. The GeSn quantum well with Ge barriers sits in the background, while the GeSn quantum well with ordered SiGeSn barriers is in the foreground. Short-range atomic order in the SiGeSn barriers may enable the improved carrier mobility, visualized by the increased density of charge transport lines flowing through that material. Bloch spheres in the background represent quantum information science applications.

Credit

Eric Pollack

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