A Valuable and Low‑Budget Process Scheme of Equivalized 1 nm Technology Node Based on 2D Materials (IMAGE)
Caption
- A set of MoS2 nanosheet field-effect transistors (NSFETs) are fabricated, with two stacking nanosheet channel, in which two parallel MoS2 channels are controlled by three gate electrodes simultaneously.
- By building a comprehensive framework, the feasibility of replacing silicon-based complementary field-effect transistors of 1 nm node with 2D-NSFETs provides a 2D technology solution for 1 nm nodes, i.e., “2D eq 1 nm” nodes are verified.
- The horizontally miniaturized 2D-NSFET achieves a frequency increase of 28% at a fixed power consumption and also obtains a similar trend in 16-bit RISC-V CPU.
Credit
Yang Shen, Zhejia Zhang, Zhujun Yao, Mengge Jin, Jintian Gao, Yuhan Zhao, Wenzhong Bao*, Yabin Sun*, He Tian*.
Usage Restrictions
Credit must be given to the creator. Only noncommercial uses of the work are permitted. No derivatives or adaptations of the work are permitted.
License
CC BY-NC-ND