An overview of FG devices integrating 2D materials. (IMAGE)
Caption
Firstly, a brief introduction was given to commonly used two-dimensional materials, including graphene, transition metal dichalcogenides (TMDC), black phosphorus (BP), and hexagonal boron nitride (h-BN). Their structural differences and unique physicochemical properties, such as electron mobility, bandgap, flexibility, and mechanical properties, were analyzed. The potential applications of these materials in FG transistors were also explored. Then, the charge tunneling mechanism of FG transistors was introduced, and the development of FG transistors classified into five common structures was summarized. In addition, various 2D FG devices and their applications in materials, devices, and applications in memory devices and neural morphology computing were systematically reviewed. Finally, issues related to material preparation, device structure design, device stability control, and integration of 2D FG transistors were raised, and potential development trends for exploration and innovation in this field were outlined.
Credit
Chao Hu, Beijing Institute of Graphic Communication.
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