Figure 1 | Electro-optic performance enhancement enabled by a self-buffered layer (IMAGE)
Caption
Figure 1 | Electro-optic performance enhancement enabled by a self-buffered layer. a, Schematic of the self-buffered design, in which interface-induced edge dislocations give rise to a periodically modulated in-plane stress distribution within the film. Inset: Phase-field simulation results showing the emergence of orthorhombic (O-phase) polar nanoregions at the domain boundaries. b, Cross-sectional scanning transmission electron microscopy (STEM) image of the BTO film, revealing a ~40 nm-thick self-buffered layer at the film–substrate interface. Inset: High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) image acquired across a domain boundary and the corresponding polarization distribution. A high density of transitional phases dominated by the orthorhombic (O) phase is induced, giving rise to a multiphase-coexisting polymorphic phase boundary, which enables a pronounced enhancement of electro-optic performance. c, Strain maps of the in-plane (top) and out-of-plane (bottom) components reconstructed from Nanobeam Electron Diffraction (NED) results. Clear periodic strain gradient stripes are observed in the in-plane component. d, Temperature dependence of Second Harmonic Generation (SHG) intensity and out-of-plane lattice constant. Inset: Schematic of the temperature-dependent domain evolution.Labels a, c, and o correspond to T-phase a/c domains and O-phase domains. e, Variation of refractive index as a function of the AC electric field applied along the in-plane <110> and <100> directions. The extracted effective electro-optic coefficient is 253 pm V-1.
Credit
Changzheng Sun et al.
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