Figure 1 | Charge-transfer Mott insulator and the extreme weak interlayer coupling (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Figure 1 | Charge-transfer Mott insulator and the extreme weak interlayer coupling

Caption

Figure 1 | Charge-transfer Mott insulator and the extreme weak interlayer coupling.a, schematic of the charge-transfer Mott insulator state using the Hubbard U treatment, where the parameters Δ and U indicate the charge-transfer energy and on-site Coulomb energy, respectively. b, structure of 2D VOCl along the a-axis. c, orbital-projected band structures for V 3d orbitals. d, Band gap values as a function of the number of layers in VOCl flakes. e, calculated electronic structures for monolayer (left) and bulk (right) VOCl. f, THG process-dependent on excitation intensity at 1558 nm. g, variation of χ(3) with thickness.  

Credit

Zheng Liu et al.

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