Figure | Structure, working principle and photoresponse of the tunable-sensitivity phototransistor. (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Figure | Structure, working principle and photoresponse of the tunable-sensitivity phototransistor.

Caption

Figure | Structure, working principle and photoresponse of the tunable-sensitivity phototransistor.  a, Schematic of the phototransistor, consisting of a MoS2 FET integrated with a photodiode. h-BN serves as both the dielectric and protective layer, while graphite is used as the contact and gate electrode. b, Band structure of the device in the dark. c, Band structure of the device under illumination. d, Dependence of IDS on Pin under 516-nm light at different VGS. e, Variation of the current ratio (tunable-sensitivity phototransistor: I0/Ilight; conventional phototransistor: Ilight/I0) as a function of the light intensity ratio (Pin/P0) at different VGS, where P0 represents the minimum detectable light intensity, and I0 is the corresponding current. f, Comparison of responsivity (R = |ILight-IDark|/Pin) of the tunable-sensitivity phototransistor and conventional phototransistor under different Pin.

Credit

Shun Feng et al.

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