Schematic illustration of the synergistic electron-phonon optimization strategy in Ni/Sb co-doped GeTe thermoelectrics (IMAGE)

Tsinghua University Press

Schematic illustration of the synergistic electron-phonon optimization strategy in Ni/Sb co-doped GeTe thermoelectrics

Caption

(A) The crystal structure of GeTe co-doped with Sb and Ni, illustrating the dual mechanism of facilitating carrier transport (purple arrows) while effectively scattering phonons (red waves). (B) Electronic band structure engineering: The unique electronic configuration of Nickel induces shallow impurity levels and promotes valence band convergence, significantly enhancing the carrier effective mass and electrical performance. (C) Multiscale defect engineering: The in situ formation of NiGe nanophases (10-30 nm), combined with grain boundaries, dislocations, and Ge vacancies, constructs a complex microstructural landscape that suppresses lattice thermal conductivity.

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Journal of Advanced Ceramics, Tsinghua University Press

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