SThM analysis and electrothermal simulation results of a ion-motion-mediated volatile memristor (top), Demonstration of a true random number generator and probabilistic computing exploiting inherently stochastic resistive switching (bottom) (IMAGE)

Sungkyunkwan University External Affairs Division (PR team)

SThM analysis and electrothermal simulation results of a ion-motion-mediated volatile memristor (top), Demonstration of a true random number generator and probabilistic computing exploiting inherently stochastic resistive switching (bottom)

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SThM analysis and electrothermal simulation results of a ion-motion-mediated volatile memristor (top), Demonstration of a true random number generator and probabilistic computing exploiting inherently stochastic resistive switching (bottom)

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Prof. Jung Ho Yoon

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