Topography and tunneling spectra at different stacking regions of a marginally twisted bilayer graphene device (IMAGE)
Caption
Topography and tunneling spectra at different stacking regions of a marginally twisted bilayer graphene device. (a) Sample configuration. (b) Large-area STM topography of marginally twisted bilayer graphene (m-TBG) device. Three types of stacking configurations (AA, AB/BA, and shear DW) are shown on the upper panel. Colored crosses mark spectroscopy sites in (e): AA (blue), AB/BA (dark blue), DW-M (red), DW-S (dark red). Yellow dashed line marks an individual DW-S. (c) Spatial distribution of twist angles in TBG sample, corresponding to the topography shown in (b). (d) The 2×2 moiré supercell of relaxed TBG with a twist angle θ = 0.35° and a uniaxial hetero-strain ε = 0.3%. L1 and L2 denote the moiré lattice vectors. (e) dI/dV spectra on four sites in (b). The dark blue dashed line indicates the shifted charge neutrality point (CNP). The black arrow marks the peak position of the AA site. The orange arrow marks the peak position of DW-S. (f) dI/dV spectra taken along the yellow line in (d), with dark red curves highlighting DW-S regions with a peak at -120 meV (orange arrow). (g) Colormap of (f), highlighting the peak at -120 meV (orange arrow) in DW-S.
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