Bild1 (IMAGE)
Caption
Left: Thickness image of MXene-based capacitive comb-structure devices (light contrast) on a silicon wafer with 100 nm oxide (red). Right: Two magnifications highlighting film homogeneity at the microscale. With an average thickness of 5.4 nm, small variations across the microstructured device are visible according to the color scale.
Credit
Appl. Phys. Lett. 128, 171601 (2026)
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Credit must be given to the creator. Adaptations must be shared under the same terms.
License
CC BY-SA