Schematic of the tellurium transistor employing a raised source/drain structure, and the improved transfer characteristics resulting from reduced contact resistance (demonstrating an over 17-fold increase in on-state current) (IMAGE)

Pohang University of Science & Technology (POSTECH)

Schematic of the tellurium transistor employing a raised source/drain structure, and the improved transfer characteristics resulting from reduced contact resistance (demonstrating an over 17-fold increase in on-state current)

Caption

Schematic of the tellurium transistor employing a raised source/drain structure, and the improved transfer characteristics resulting from reduced contact resistance (demonstrating an over 17-fold increase in on-state current).

Credit

POSTECH

Usage Restrictions

None

License

Licensed content

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.