Structure of the ZnO–Te heterojunction device and double NDT, D-NDT, characteristics that generate double current peaks within a single device through control of the geometric overlap length. (IMAGE)

Pohang University of Science & Technology (POSTECH)

Structure of the ZnO–Te heterojunction device and double NDT, D-NDT, characteristics that generate double current peaks within a single device through control of the geometric overlap length.

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Structure of the ZnO–Te heterojunction device and double NDT, D-NDT, characteristics that generate double current peaks within a single device through control of the geometric overlap length.

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POSTECH

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