Ballistic transport in single-crystalline Cu(111) thin films (IMAGE)

Pohang University of Science & Technology (POSTECH)

Ballistic transport in single-crystalline Cu(111) thin films

Caption

a, Scanning electron microscopy (SEM) image of a Hall bar device with a channel width (W) of 150 nm.

b, Cross-sectional transmission electron microscopy (TEM) image of the Hall bar device.

c, Schematic illustration of the bend resistance measurement.

d, Temperature dependence of the bend resistance measured in Hall bar devices with channel widths of 10 μm, 1 μm, 250 nm, and 150 nm.

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POSTECH

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