β-Ag2Te-based topological phase transition transistor. (IMAGE)
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When no gate voltage is applied, β-Ag2Te nanoflakes behave as lightly doped topological insulators. After applying a sufficiently large positive gate voltage, the electric field induces a Stark shift of the electronic bands, and the system transitions from a topological insulator to a heavily doped semiconductor, achieving the “on-state.” Conversely, when a sufficiently strong negative gate voltage induces the topological phase transition, the Fermi level moves into the induced band gap, resulting in an insulating “off-state.”
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