Broadband self-powered Bi2O2Se-based semi-vertical heterojunction photodetector with high performance (IMAGE)

Tsinghua University Press

Broadband self-powered Bi2O2Se-based semi-vertical heterojunction photodetector with high performance

Caption

N-type Bi2O2Se nanosheets exhibiting high carrier mobility were synthesized via chemical vapor deposition (CVD), and Bi2O2Se/InSe semi-vertical heterojunction photodetectors were subsequently fabricated. Leveraging the synergistic effects of a single-sided depletion region, type-II band alignment, and high-mobility graphene electrodes, the device successfully achieves high sensitivity and ultrafast response, thereby enabling excellent self-powered broadband photodetection.

Credit

Nano Research, Tsinghua University Press

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