CsSnI₃ Thin-Film Transistors Fabricated via Volatile Surface Reconstruction (IMAGE)

Pohang University of Science & Technology (POSTECH)

CsSnI₃ Thin-Film Transistors Fabricated via Volatile Surface Reconstruction

Caption

(a) Surface reconstruction mechanism, (b) Schematic of transistor fabrication, (c–g) Electrical characteristics of the transistors, (h–i) Large-area electrical characteristics of wafer-scale transistors, (j) Thermal stability of the devices

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POSTECH

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