Stepwise growth of epitaxial graphene on SiC suppresses step bunching and enables dualsite nucleation. (IMAGE)

Tsinghua University Press

Stepwise growth of epitaxial graphene on SiC suppresses step bunching and enables dualsite nucleation.

Caption

An optimized stepwise growth strategy is developed for epitaxial graphene on SiC substrates. Via buffer-layer-mediated kinetic regulation, this strategy effectively suppresses both giant step bunching and step-edge-dominated nucleation during growth, enabling simultaneous nucleation of graphene on terraces and step edges, and thus yielding high-quality, uniform single-crystal monolayer graphene.

Credit

Nano Research, Tsinghua University Press.

Usage Restrictions

News organizations may use or redistribute this image with proper attribution as part of news coverage of this paper only.

License

Original content

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.