Figure 1 Properties of self-trapped holes in β-Ga₂O₃. (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Figure 1 Properties of self-trapped holes in β-Ga₂O₃.

Caption

Figure 1 Properties of self-trapped holes in β-Ga₂O₃. a Formation mechanism of STHs. Formation energy of intrinsic defects of β-Ga2O3 under b O-poor limit and c O-rich limit. d Trapped-detrapped process of STHs on OⅢ atoms. e Configuration coordinate diagrams of hopping process between two neighboring OⅢ atoms. f Mechanism of PPC effect induced by STHs.

Credit

Shujie Jiao et al.

Usage Restrictions

Credit must be given to the creator.

License

CC BY

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.