A 300-mm silicon photonics wafer and the Ge PDs performance (IMAGE)

Science China Press

A 300-mm silicon photonics wafer and the Ge PDs performance

Caption

The device combines a semi-embedded germanium absorbing region, optimized doping and octagonal contact pads. Wafer-level tests showed low dark current, high responsivity and 110 GHz bandwidth, while high-speed measurements produced open eye diagrams at 320 Gbit/s PAM-4 and 413 Gbit/s PAM-6.

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© Wang Xu

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