Conceptual image of a ferroelectric capacitor achieving low-voltage operation through electrode and interface engineering and its potential application to next-generation DRAM-class memory. (IMAGE)

Seoul National University College of Engineering

Conceptual image of a ferroelectric capacitor achieving low-voltage operation through electrode and interface engineering and its potential application to next-generation DRAM-class memory.

Caption

From left: the electrode–interface structure; the mechanism by which the depolarization field assists the initial stage of polarization switching; and the proposed common-plate ferroelectric memory (CP-FeRAM) architecture.

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© Seoul National University College of Engineering

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