Etching-flux-mediated single-centred nucleation (EF-SCN) for deterministic crystal growth (IMAGE)

Hanyang University Research Strategy Planning Team

Etching-flux-mediated single-centred nucleation (EF-SCN) for deterministic crystal growth

Caption

The EF-SCN method uses oxygen released from an oxide barrier to suppress nucleation near pattern boundaries, enabling uniform, centrally nucleated, single-crystal molybdenum disulfide (MoS2) domains for two-dimensional electronics. 

Credit

Professor Woo-Hee Kim from Hanyang University ERICA, Republic of Korea

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