Producing New Infrared Detector Materials (IMAGE) U.S. Army Research Laboratory Caption The Molecular Beam Epitaxy (MBE) is being used by Army researchers to produce new infrared detector materials based on InAsSb. This is a III-V semiconductor, a class of materials also used in opto-electronics in many commercial products such as DVD players and cell phones. Credit US Army photo Usage Restrictions None License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.