Magnetic memory states go exponential (IMAGE) Bar-Ilan University Caption Researchers from Bar-Ilan University have shown that relatively simple magnetic thin film structures of N crossing ellipses can support two to the power of 2N magnetic states - much greater than previously thought - and demonstrated switching between the states with spin currents. The ability to stabilize and control exponential number of discrete magnetic states in a relatively simple structure constitutes a major contribution to spintronics and may pave the way to multi-level magnetic memory with extremely large number of states per cell, be used for neuromorphic computing, and more. The image shows examples of simulated magnetic states supported by the structures, and pictures of the devices themselves that were taken with a scanning electron microscope. Credit Shubhankar Das, Ariel Zaig, Moty Schultz and Lior Klein Usage Restrictions None License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.