Band Structure in TI Doped with Magnetic Atoms (IMAGE)

Helmholtz-Zentrum Berlin für Materialien und Energie

Band Structure in TI Doped with Magnetic Atoms

Caption

In pure bismuth-selenide (left) no bandgap is found. With the addition of magnetic manganese (4 percent; 8 percent), a band gap (dashed line) arises, and electrical conductivity disappears. This effect shows even at room temperature.

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HZB

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