Device Schematics (IMAGE) Technische Universität Dresden Caption Device schematics. a - Schematic cross section of the device. b - Hot-electron transistor operation. Electrons are injected by applying a negative emitter-base bias, and detected in the molecular semiconductor. These electrons are out of equilibrium with the thermal electrons in the base which cannot be described by a larger temperature. The measurements can be performed either without or with externally applied collector-base bias. Credit Frank Ortmann Usage Restrictions None License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.