Device Structure and Performance (IMAGE) Tokyo Institute of Technology Caption The structure of the proposed device, showing how the generated holes (h+) are used to facilitate thiol oxidation. The measured current increases dramatically under illumination and application of a slight potential. Credit <i>Chemical Communications</i> Usage Restrictions None License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.