A Schematic of the Direct-Indirect Nanowire Laser Operation (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

A Schematic of the Direct-Indirect Nanowire Laser Operation

Caption

A novel direct-indirect heterostructures is designed, where lasing emission only occurs from quantum well regions but carriers are injected from indirect regions, where recombination is suppressed. This provides a continuous 'topping-up' of carrier density in the quantum well, causing nanosecond lasing after sub-picosecond excitation. Coupled with a mm-scale optical correlation length, corresponding to an end-facet reflectivity of over 70%, these two features provide record-low room-temperature lasing thresholds for near-infrared silicon-integratable nanowire lasers

Credit

by Stefan Skalsky, Yunyan Zhang, Juan Arturo Alanis, H. Aruni Fonseka, Ana M. Sanchez, Huiyun Liu and Patrick Parkinson

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