An Extremely Simple MRAM (IMAGE)

_Tokyo Institute of Technology

An Extremely Simple MRAM

Caption

The proposed combination of materials serves as a memory unit by supporting read and write operations. The spin injection by the topological insulator (TI) material reverses the magnetization of the ferromagnetic (FM) material, representing the 'write' operation. Furthermore, the spin injection can also change the overall resistance of the materials, which can be sensed through an external circuit, representing the 'read' operation.

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<i>Journal of Applied Physics</i>

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