An Extremely Simple MRAM (IMAGE) Tokyo Institute of Technology Caption The proposed combination of materials serves as a memory unit by supporting read and write operations. The spin injection by the topological insulator (TI) material reverses the magnetization of the ferromagnetic (FM) material, representing the 'write' operation. Furthermore, the spin injection can also change the overall resistance of the materials, which can be sensed through an external circuit, representing the 'read' operation. Credit <i>Journal of Applied Physics</i> Usage Restrictions None License Licensed content Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.