Pressure-Induced Graphene-Diamane Transition (IMAGE)

Center for High Pressure Science & Technology Advanced Research

Pressure-Induced Graphene-Diamane Transition

Caption

We demonstrate the realization of a pristine diamane through diamondization of mechanically exfoliated few-layer graphene via compression. Compared to gapless graphene, semiconducting h-diamane offers exciting possibilities for carbon-based electronic devices.

Credit

Feng Ke

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