Patterning Silicon at the One Nanometer Scale (IMAGE)
Caption
Ions from a reactive plasma shape a silicon nanowire approximately 40 atoms wide. The periodic atomic arrangement is preserved up to the edge of the nanowire.
Credit
Image courtesy of V.R. Manfrinato et al., Patterning Si at the 1 nm Length Scale with Aberration-Corrected Electron-Beam Lithography: Tuning of Plasmonic Properties by Design, Adv. Funct. Mater. 2019 1903429. Wiley-VCH GmbH. Reproduced with permission.
Usage Restrictions
Image courtesy of V.R. Manfrinato et al., Patterning Si at the 1 nm Length Scale with Aberration-Corrected Electron-Beam Lithography: Tuning of Plasmonic Properties by Design, Adv. Funct. Mater. 2019 1903429. Wiley-VCH GmbH. Reproduced with permission.
License
Licensed content