Polarization-sensitive photoresponse of the β-InSe FET. (IMAGE)

Science China Press

Polarization-sensitive photoresponse of the β-InSe FET.

Caption

(a) The configuration for angle-dependent transport behavior determination. (b) Angular dependence of the photocurrent of the device at Vds = 0.5 V and Vds = 1 V, respectively. (c) Top-view and side-view of the contributing orbital to the photocurrent. Red arrow indicates the light polarization angle θ. (d) The quantum transport calculation of photocurrent with different polarized angle θ for ± 0.5 V and ±1.0 V bias voltages, when the light of the wavelength of 800 nm is irradiated.

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@Science China Press

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