Figure |Some factors influencing the photocarrier relaxation dynamics in 2D semiconductors. (IMAGE)

Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS

Figure |Some factors influencing the photocarrier relaxation dynamics in 2D semiconductors.

Caption

a, Modulation on the Coulomb interaction. (left) Illustration of increased screening of Coulomb interactions in 2D semiconductors. (right) Schematic illustration showing the impact of increased screening of Coulomb interactions on the electronic bandgap (Eg), exciton binding energy (Eb) and optical bandgap (Eopt) of 2D semiconductors. b, Modulation through initial distribution of photocarriers in electronic band structures (left) The electronic band structure of monolayer TMDs by DFT calculation. The green area shows the band nesting region. (right) Relaxation pathways of photocarriers in monolayer TMDs, where the excitation is from ground state (GS) to the band nesting (BN) region. c, Modulation through interfacial electron-phonon coupling. (left) Illustration of interfacial electron-phonon (e-ph) coupling. (right) Photocarrier dynamics of monolayer MoSe2 on different substrates. d, Modulation through engineering the band alignment of vdW heterostructures. (left) Band alignment of the graphene/MoS2/MoSe2 trilayer sample. (right) Electron transfer from MoSe2 to graphene and its lifetime in the trilayer.

Credit

by Yuhan Wang, Zhonghui Nie, Fengqiu Wang

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